4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Etching of Silicon Carbide Using Chlorine Trifluoride Gas

Four-point probe characterization of 4H silicon carbide

Preparation of atomically flat surfaces on silicon carbide using hydrogen etching

Hydrogen etching of 6Hand 4H-SiC(0001) surfaces is studied. The aspolished substrates contain a large number of scratches arising from the polishing process which are eliminated by hydrogen etching. Etching is carried out in a flow of hydrogen gas at atmospheric pressure and temperatures around 1600-1700 C attained on a tantalum strip heater. Post-etching atomic force microscopy (AFM) images sh...

Analysis of the etching of silicon in an inductively coupled chlorine plasma using laser thermal desorption

The etching of silicon by a chlorine inductively coupled plasma ~ICP! was studied using laser desorption laser-induced fluorescence ~LD-LIF! analysis to determine the surface coverage of chlorine during steady-state etching. Laser interferometry was used to measure etch rates, and optical emission actinometry and Langmuir probe analysis were used to characterize the plasma. The ICP operated in ...

Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures

The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that the etch rates of Si3N4 and SiO2 are not limited by the amount of fluorine arriving on the surface only. Adding N2 in small amounts to a CF4 /O2 micr...